SavantIC Semiconductor Product Specification 2SB1024 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1414 APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector -emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A -0.5 A 20 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1024 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -20 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.5 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 -80 UNIT V Switching times ton Turn-on time tstg Storage time tf IB1=-IB2=-6mA VCC=-30V ,RL=10= Fall time 2 0.15 µs 0.80 µs 0.40 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1024