SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1480 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -2 A ICM Collector current-peak -4 A PC Collector power dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -2.0 V VBE Base-emitter on voltage IC=-1A ; VCE=-4V -1.2 V ICES Collector cut-off current VCE=-60V; VBE=0 -0.2 mA ICEO Collector cut-off current VCE=-30V; IB=0 -0.3 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.1A ; VCE=-4V 35 hFE-2 DC current gain IC=-1A ; VCE=-4V 40 -60 UNIT V 250 Switching times ton Turn-on time tstg Storage time tf IC=-1A ;IB1=-IB2=-0.1A Fall time hFE-2 Classifications R Q P 40-90 70-150 120-250 2 0.1 µs 1.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SB1052