SAVANTIC 2SB1064

SavantIC Semiconductor
Product Specification
2SB1064
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1505
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
IC
Collector current
ICM
Collector current-peak
-4.5
A
IB
Base current
-0.5
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB1064
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ,IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA ,IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA ,IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
µA
hFE
DC current gain
IC=-0.5A ; VCE=-3V
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
50
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
70
MHz
2
MIN
TYP.
60
MAX
UNIT
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB1064