SavantIC Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -5 A PC Collector power dissipation Ta=25 1.5 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1087 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0 VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 1 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -3 mA hFE-1 DC current gain IC=-2A , VCE=-5V 2000 hFE-2 DC current gain IC=-5A , VCE=-5V 500 2 MIN TYP. MAX -100 UNIT V 20000 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1087