SavantIC Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD2060 ·Low collector saturation voltage: VCE(SAT)=-1.7V(Max) at IC=-3A,IB=-0.3A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V -4 A -0.4 A IC Collector current IB Base current PC Collector dissipation Ta=25 2.0 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 -1.7 V VBE Base-emitter on voltage IC=-3A;VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 µA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz Collector output capacitance f=1MHz;VCB=10V 130 pF fT COB CONDITIONS hFE-1 Classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX -80 UNIT V 240 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SB1368 SavantIC Semiconductor Product Specification 2SB1368 Silicon PNP Power Transistors 4