SAVANTIC 2SB1375

SavantIC Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2012
·Low collector saturation voltage:
VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A
·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-7
V
-3
A
-0.5
A
IC
Collector current
IB
Base current
PC
Collector dissipation
Ta=25
2.0
TC=25
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.0
-1.5
V
VBE
Base-emitter voltage
IC=-0.5A;VCE=-5V
-0.75
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-10
µA
hFE-1
DC current gain
IC=-0.5A ; VCE=-5V
100
hFE-2
DC current gain
IC=-2A ; VCE=-5V
15
Transition frequency
IC=-0.5A ; VCE=-5V
9
MHz
Collector output capacitance
IE=0; f=1MHz;VCB=-10V
50
pF
fT
COB
CONDITIONS
2
MIN
TYP.
MAX
-60
UNIT
V
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1375
SavantIC Semiconductor
Product Specification
2SB1375
Silicon PNP Power Transistors
4