SavantIC Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -8 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=: -120 V V(BR)CBO Collector-base breakdown voltage IC=-100µA; IE=0 -120 V V(BR)EBO Emitter-base breakdown voltage IE=-50mA; IC=0 -7 V VCEsat-1 Collector-emitter saturation voltage IC=-4A ;IB=-8mA -1.5 V VCEsat-2 Collector-emitter saturation voltage IC=-8A ;IB=-80mA -3.0 V VBEsat-1 Base-emitter saturation voltage IC=-4A ;IB=-8mA -2.0 V VBEsat-2 Base-emitter saturation voltage IC=-8A ;IB=-80mA -3.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA ICEO Collector cut-off current VCE=-100V; RBE=: -10 µA hFE DC current gain IC=-4A ; VCE=-3V 2 MIN 1000 TYP. MAX 20000 UNIT SavantIC Semiconductor Product Specification 2SB1391 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 3 ±0.15 mm)