SAVANTIC 2SB1436

SavantIC Semiconductor
Product Specification
2SB1436
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD2166
·Low collector saturation voltage
APPLICATIONS
·For audio power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-30
V
VCEO
Collector-emitter voltage
Open base
-20
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current (DC)
-5
A
ICM
Collector current-Peak
-10
A
PD
Total power dissipation
Ta=25
1.5
TC=25
5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1436
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA ;IE=0
-30
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA ;IB=0
-20
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA ;IC=0
-6
V
Collector-emitter saturation voltage
IC=-4A ;IB=-0.1A
-1.0
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-0.5
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.5
µA
hFE
DC current gain
IC=-0.5A ; VCE=-2V
Transition frequency
IE=50mA ; VCE=-6V; f=30MHz
120
MHz
Collector output capacitance
IE=0 ; VCB=-20V; f=1MHz
60
pF
VCEsat
fT
Cob
2
180
390
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SB1436