SAVANTIC 2SB1490

SavantIC Semiconductor
Product Specification
2SB1490
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2250
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
·Optimum for HiFi output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-160
V
VCEO
Collector-emitter voltage
Open base
-140
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-12
A
PC
Collector power dissipation
TC=25
90
Ta=25
3.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1490
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-6A ;IB=-6mA
-2.5
V
VBEsat
Base-emitter saturation voltage
IC=-6A ;IB=-6mA
-3.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-100
µA
ICEO
Collector cut-off current
VCE=-140V; IB=0
-100
µA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
µA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
2000
hFE-2
DC current gain
IC=-6A ; VCE=-5V
5000
Transition frequency
IC=-0.5A ; VCE=-10V;f=1MHz
fT
CONDITIONS
MIN
TYP.
MAX
-140
UNIT
V
30000
20
MHz
1.0
µs
1.5
µs
1.2
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A ;IB1=-IB2=-6mA
VCC=-50V
hFE-2 classifications
Q
P
5000-150000
8000-30000
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
2SB1490