SavantIC Semiconductor Product Specification 2SB1530 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High VCEO ·Complement to type 2SD2337 APPLICATIONS ·For low frequency power amplifier color TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -2 A ICM Collector current-Peak -5 A PC Collector power dissipation TC=25 20 W Ta=25 1.5 Tj Junction temperature 150 Tstg Storage temperature -45~150 SavantIC Semiconductor Product Specification 2SB1530 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA , RBE=< V(BR)EBO Emitter-base breakdown voltage IE=-5mA , IC=0 Collector-emitter saturation voltage IC=-500mA ;IB=-50mA -3.0 V VBE Base-emitter on voltage IC=-50mA ; VCE=-4V -1.0 V ICBO Collector cut-off current VCB=-120V ;IE=0 -1 µA hFE-1 DC current gain IC=-50mA ; VCE=-4V 60 hFE-2 DC current gain IC=-500mA ; VCE=-10V 60 VCEsat CONDITIONS hFE-1 Classifications B C 60-120 100-200 2 MIN TYP. MAX UNIT -150 V -6 V 200 SavantIC Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SB1530