SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION ·With TO-3PI package ·Complement to type 2SD2387 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PI) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -5 V -8 A -0.1 A 80 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA -2.5 V VBE Base-emitter on voltage IC=-7A ; VCE=-5V -3.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -5 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 µA hFE-1 DC current gain IC=-7A ; VCE=-5V 5000 hFE-2 DC current gain IC=-12A ; VCE=-5V 2000 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 170 pF fT Transition frequency IC=-1A ; VCE=-5V 30 MHz hFE-1 Classifications A B C 5000-12000 9000-18000 15000-30000 2 MIN TYP. MAX -140 UNIT V 30000 SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB1558