SavantIC Semiconductor Product Specification 2SB337 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio frequency power output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -10 V IC Collector current -7 A IE Emitter current 7 A IB Base current -1 A PC Collector power dissipation 30 W Tj Junction temperature 100 Tstg Storage temperature -55~100 TC-55 SavantIC Semiconductor Product Specification 2SB337 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -10 V Collector-emitter saturation voltage IC=-4A; IB=-0.4A -0.29 V VBE Base-emittter on voltage IC=-1A ;VCE=-2V -0.38 V ICBO Collector cut-off current VCB=-30V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-10V; IE=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-2V VCEsat CONDITIONS hFE Classifications A B 50-100 80-165 2 MIN 50 TYP. 90 MAX 165 UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SB337