SAVANTIC 2SB512

SavantIC Semiconductor
Product Specification
2SB512
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB512
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ,IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-1.0
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-1.0
µA
hFE
DC current gain
IC=-0.5A ; VCE=-5V
60
Transition frequency
IC=-0.5A ; VCE=-10V
3
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
320
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB512