SAVANTIC 2SB550

SavantIC Semiconductor
Product Specification
2SB550
Silicon PNP Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplification
·For low speed and power switching
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-70
V
VEBO
Emitter-base voltage
Open collector
-5
V
-5
A
25
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SB550
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-100
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-70
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5
V
ICBO
Collector cut-off current
VCB=-80V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-0.1
mA
hFE
DC current gain
IC=-1A ; VCE=-5V
Transition frequency
IC=-0.1A ; VCE=-10V
fT
2
30
200
5
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SB550