SavantIC Semiconductor Product Specification 2SB761 2SB761A Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SD856/856A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS 2SB761 VCBO Collector-base voltage -60 Open base 2SB761A VEBO Emitter-base voltage V -80 2SB761 Collector-emitter voltage UNIT -60 Open emitter 2SB761A VCEO VALUE V -80 Open collector -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collectorl power dissipation 35 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB761 2SB761A Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO VCEsat PARAMETER CONDITIONS 2SB761 Collector-emitter breakdown voltage MIN TYP. MAX UNIT -60 IC=-30mA; IB=0 2SB761A V -80 Collector-emitter saturation voltage IC=-3 A;IB=-0.375 A -1.2 V VBE Base-emitter on voltage IC=-3A ; VCE=-4V -1.8 V ICES Collector cut-off current -200 µA 2SB761 2SB761A VCE=-60V; VBE=0 VCE=-80V; VBE=0 ICEO Collector cut-off current VCE=-60V; IB=0 -300 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-3A ; VCE=-4V 10 250 Switching times ton Turn-on time 0.5 µs 2.0 µs IC=-1A ; IB1=-IB2=-0.1 A toff Turn-off time hFE-1 classifications R Q P 40-90 70-150 120-250 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB761 2SB761A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3