SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION ·With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 40 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 6 A IB Base current 0.6 A PC Collector power dissipation Ta=25? 1.2 TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V Collector-emitter breakdown voltage IC=10mA; IB=0 ICBO Collector cut-off current VCB=30V;IE=0 1.0 µA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 µA hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1.0A ; VCE=5V 40 COB Output capacitance IE=0; VCB=10V;f=1.0MHz 55 pF fT Transition frequency IC=0.1A ; VCE=5V 65 MHz V(BR)CEO u PARAMETER hFE-1 classifications N M L K 40-60 50-100 80-160 120-250 2 30 V 250 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1096