SavantIC Semiconductor Product Specification 2SC1170 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? MAX UNIT 2.5 ? /W TC=25? THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case SavantIC Semiconductor Product Specification 2SC1170 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.2 V ICES Collector cut-off current VCE=1200V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=800V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 20 µA hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 DC current gain IC=3A ; VCE=10V 5 Transition frequency IC=0.5A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX 500 UNIT V 4 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC1170