SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25? ) SYMBOL PARAMETER CONDITIONS 2SC1226 VCBO Collector-base voltage 32 Open base 2SC1226A VEBO Emitter-base voltage V 50 2SC1226 Collector-emitter voltage UNIT 40 Open emitter 2SC1226A VCEO VALUE V 40 Open collector 5 V IC Collector current 2 A ICM Collector current-peak 3 A IB Base current 0.6 A PC Collector power dissipation 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2 A VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2 A 2SC1226 V(BR)CBO Collector-base breakdown voltage MAX UNIT 0.4 1.0 V 1.5 V IC=1mA;IE=0 Collector-emitter breakdown voltage V 50 2SC1226 32 IC=10mA; IB=0 2SC1226A u TYP. 40 2SC1226A V(BR)CEO MIN V 40 ICBO Collector cut-off current VCB=20V; IE=0 1 µA ICEO Collector cut-off current VCE=12V; IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=5V COB Output capacitance IE=0; VCB=5V;f=1MHz 50 pF fT Transition frequency IE=0.5A ; VCB=5V 150 MHz hFE classifications P Q R 50-100 80-160 100-220 2 50 220 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC1226 2SC1226A SavantIC Semiconductor Product Specification 2SC1226 2SC1226A Silicon NPN Power Transistors 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SC1226 2SC1226A