SAVANTIC 2SC1672

SavantIC Semiconductor
Product Specification
2SC1672
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·Motor control
·Linear and switching applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
25
A
ICM
Collector current-peak
30
A
PT
Total power dissipation
120
W
Tj
Junction temperature
175
Tstg
Storage temperature
-55~175
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.17
/W
SavantIC Semiconductor
Product Specification
2SC1672
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A;IB=1A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=20A;IB=2A
1.2
V
Base-emitter saturation voltage
IC=20A;IB=2A
2.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE-1
DC current gain
IC=13A ; VCE=2V
20
hFE-2
DC current gain
IC=20A ; VCE=4V
10
VBEsat
CONDITIONS
2
MIN
TYP.
MAX
100
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC1672