SavantIC Semiconductor Product Specification 2SC2233 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Large collector current capability ·Large collector power dissipation APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-peak 10 A IB Base current 1 A PC Collector dissipation Ta=25 1.5 TC=25 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2233 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=170V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1A ; VCE=5V 30 hFE-2 DC current gain IC=4A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS 2 MIN TYP. MAX 60 UNIT V 150 8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2233 SavantIC Semiconductor Product Specification 2SC2233 Silicon NPN Power Transistors 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 5 2SC2233