SavantIC Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 50 V VCEO Collector-emitter voltage Open base 20 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 5 A ICM Collector current-peak 8 A IE Emitter current (DC) -5 A IEM Emitter current-peak -8 A PC Total power dissipation Ta=25 1.0 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 20 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 8 V Collector-emitter saturation voltage IC=4A; IB=0.1A 1.0 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 µA IEBO Emitter cut-off current VEB=8V; IC=0 0.1 µA hFE-1 DC current gain IC=0.5A ; VCE=2V 140 hFE-2 DC current gain IC=4A ; VCE=2V 70 Transition frequency IC=0.5A ; VCE=2V 100 MHz Collector output capacitance IE=0;f=1MHz ; VCB=10V 40 pF VCEsat fT COB CONDITIONS hFE-1 Classifications A B C 140-240 200-330 300-450 2 MIN TYP. MAX UNIT 450 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2270