SAVANTIC 2SC2706

SavantIC Semiconductor
Product Specification
2SC2706
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High power dissipation
APPLICATIONS
·For audio power amplifier and general
purpose applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
IB
Base current
2
A
PT
Total power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC2706
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ,IB=0
140
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ,IC=0
5
V
Collector-emitter saturation voltage
IC=5A; IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=140V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
55
hFE-2
DC current gain
IC=5A ; VCE=5V
35
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
160
90
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SC2706