SavantIC Semiconductor Product Specification 2SC2761 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 30 A IB Base current 6 A PC Collector power dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 SavantIC Semiconductor Product Specification 2SC2761 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1m A ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1m A ; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=20A; IB=4A 1.5 V VBE(sat) Base-emitter saturation voltage IC=20A; IB=4A 1.7 V ICBO Collector cut-off current VCB=450V IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=15A ; VCE=2V 2 MIN 8 TYP. MAX UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2761