SavantIC Semiconductor Product Specification 2SC2768 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V 6 A 1.5 A 40 W IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT /W SavantIC Semiconductor Product Specification 2SC2768 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V V(BR)CBO Collector-base breakdown voltage IC=100µA ; IE=0 250 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A 0.5 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.8A 1.2 V ICBO Collector cut-off current VCB=250V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=5V 1.0 µs 2.0 µs 1.0 µs 20 Switching times ton Turn-on time tstg Storage time tf IC=4A; IB1=-IB2=-0.4A RL=20A Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2768 SavantIC Semiconductor Product Specification 2SC2768 Silicon NPN Power Transistors 4