SavantIC Semiconductor Product Specification 2SC3168 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-Peak 40 A IB Base current 7 A IBM Base current-Peak 14 A PT Total power dissipation 200 W Tj Junction temperature 200 Tstg Storage temperature -65~200 Tmb=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.63 UNIT /W SavantIC Semiconductor Product Specification 2SC3168 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCE(sat) Collector-emitter saturation voltage IC=10A; IB=2A 1.0 V VBE(sat) Base-emitter saturation voltage IC=10A; IB=2A 1.5 V ICBO Collector cut-off current At rated voltage 0.1 mA ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE DC current gain IC=10A ; VCE=2V Transition frequency IC=2A ; VCE=10V fT 2 400 UNIT V 10 40 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC3168