SavantIC Semiconductor Product Specification 2SC3519 2SC3519A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2SC3519 VCBO Collector-base voltage 160 Open base 2SC3519A VEBO Emitter-base voltage V 180 2SC3519 Collector-emitter voltage UNIT 160 Open emitter 2SC3519A VCEO VALUE V 180 Open collector 5 V IC Collector current 15 A IB Base current 4 A PC Collector power dissipation 130 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3519 2SC3519A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO PARAMETER CONDITIONS 2SA1386 Collector-emitter breakdown voltage MIN TYP. MAX 160 IC=25mA ;IB=0 2SA1386 Collector cut-off current 2SA1386A V 180 2SA1386A Collector-emitter saturation voltage UNIT IC=5A ;IB=0.5A 2.0 V 100 µA 100 µA VCB=160V; IE=0 VCB=180V; IE=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=5A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 250 pF fT Transition frequency IC=2A ; VCE=12V 50 MHz 0.20 µs 1.30 µs 0.45 µs 50 180 Switching times ton Rise time ts Storage time tf Fall time IC=10A;RL=4B IB1=- IB2=1A VCC=40V hFE Classifications O P Y 50-100 70-140 90-180 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3519 2SC3519A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 SavantIC Semiconductor Product Specification 2SC3519 2SC3519A Silicon NPN Power Transistors 4