SavantIC Semiconductor Product Specification 2SC3794 2SC3794A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High VCBO ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC3794 VCBO Collector-base voltage VALUE UNIT 800 Open emitter 2SC3794A V 900 VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 8 V IC Collector current (DC) 1.5 A ICM Collector current-Peak 3.0 A IB Base current 0.5 A PC Collector power dissipation TC=25 25 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3794 2SC3794A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , L=25mH VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2A 1.5 V 0.1 mA 0.1 mA ICBO Collector cut-off current CONDITIONS 2SC3794 VCB=800V; IE=0 2SC3794A VCB=900V; IE=0 MIN MAX 500 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.1A ; VCE=5V 15 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V fT TYP. UNIT V 8 MHz Switching times ton ts tf 2SC3794 1.0 2SC3794A 1.2 Turn-on time µs IC=1A; IB1=- IB2=0.2A VCC=200V Storage time 3.0 2SC3794 1.0 2SC3794A 1.2 Fall time µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3