SavantIC Semiconductor Product Specification 2SC4051 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 1 A IBM Base current-Peak 2 A PT Total power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 3.12 /W SavantIC Semiconductor Product Specification 2SC4051 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO 450 UNIT Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=1.5A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=0.3A ; VCE=10V fT V 20 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1.5A;IB1=0.3A IB2=0.6A ,RL=100B VBB2=4V 2 0.5 µs 2.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC4051