SAVANTIC 2SC4059

SavantIC Semiconductor
Product Specification
2SC4059
Silicon NPN Power Transistors
DESCRIPTION
·With TO-247 package
·High voltage;high speed
·Switching power transistor
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
15
A
ICM
Collector current-Peak
30
A
IB
Base current
6
A
IBM
Base current-Peak
12
A
PD
Total power dissipation
130
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.96
/W
SavantIC Semiconductor
Product Specification
2SC4059
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A; IB=0
VCEsat
Collector-emitter saturation voltage
IC=7.5A ;IB=1.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=7.5A ;IB=1.5A
1.5
V
MAX
At rated voltage
0.1
mA
0.1
mA
450
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=7.5A ; VCE=5V
10
hFE-2
DC current gain
IC=1mA ; VCE=5V
5
Transition frequency
IC=1.5A ; VCE=10V
fT
TYP.
UNIT
V
20
MHz
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7.5A
IB1=1.5A; IB2=3.0A
VBB2=4V ,RL=20C
2
0.5
µs
2.0
µs
0.2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC4059