SavantIC Semiconductor Product Specification 2SC4664 Silicon NPN Power Transistors DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-Peak 16 A IB Base current 3 A IBM Base current-Peak 6 A PT Total power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 4.17 /W SavantIC Semiconductor Product Specification 2SC4664 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO CONDITIONS MIN TYP. MAX 200 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=4A ; VCE=2V 10 hFE-2 DC current gain IC=1mA ; VCE=2V 10 fT Transition frequency IC=0.8A ; VCE=10V ton Turn-on time ts Storage time tf Fall time IC=4A;IB1=0.8A IB2=1.6A ,RL=37.5C VBB2=4V 2 25 13 MHz 0.3 µs 1.0 µs 0.1 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC4664