SAVANTIC 2SC5124

SavantIC Semiconductor
Product Specification
2SC5124
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage switchihg transistor
APPLICATIONS
·Display horizontal deflection output
·Switching regulator and general purpose
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
10
A
ICM
Collector current-peak
20
A
IB
Base current
5
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC5124
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; RBE=:
VCEsat
Collector-emitter saturation voltage
IC=8A;IB=2A
5
V
VBEsat
Base-emitter saturation voltage
IC=8A;IB=2A
1.5
V
ICBO1
Collector cut-off current
VCB=1200V; IE=0
100
µA
ICBO2
Collector cut-off current
VCB=1500V; IE=0
1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
100
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=8A ; VCE=5V
4
fT
Transition frequency
IE=-1A ; VCE=12V
3
MHz
COB
Output capacitance
VCB=10V;f=1MHz
130
pF
0.1
µs
4.0
µs
0.2
µs
800
UNIT
V
9
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=6A;IB1=1.2A; IB2-=-2.4A
RL=33.3A;VCC=200V
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC5124
SavantIC Semiconductor
Product Specification
2SC5124
Silicon NPN Power Transistors
4