SavantIC Semiconductor Product Specification 2SC5239 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 550 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 1.5 A PC Collector dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5239 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V Transition frequency IE=-0.25A ; VCE=12V 6 MHz Collector output capacitance f=1MHz ; VCB=10V 35 pF fT Cob CONDITIONS MIN TYP. MAX 550 UNIT V 10 30 Switching times ton Turn-on time ts Storage time tf Fall time IC=1A; IB1=0.15A ;IB2=-0.45A VCC=250V; RL=250B 2 0.7 µs 4.0 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC5239 SavantIC Semiconductor Product Specification 2SC5239 Silicon NPN Power Transistors 4