SavantIC Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A ICM Collector current-peak 14 A IB Base current 3.5 A PC Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX 5 UNIT Emitter-base breakdown voltage IE=400mA ;IC=0 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A 5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.25A 1.3 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 71 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 30 hFE-2 DC current gain IC=5A ; VCE=5V 4 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz VF Diode forward voltage IF=5A 1.35 fT Transition frequency IE=0.1A ; VCE=10V 2.4 82 pF 1.8 V MHz Switching times ts Storage time tf Fall time ICP=5A;IB1(end) =1.1A fH=31.5kHz 2 4 6 µs 0.2 0.5 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SC5339 SavantIC Semiconductor Product Specification 2SC5339 Silicon NPN Power Transistors 4