SavantIC Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·High collector-base breakdown voltage :VCBO=400V(min) APPLICATIONS ·For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=? ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1 A ICM Collector current-peak 2 A PD Total power dissipation 23 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? TC=25? SavantIC Semiconductor Product Specification 2SC867 Silicon NPN Power Transistors CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V ICBO Collector cut-off current VCB=400V;IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=0.1A ; VCE=3V Transition frequency IC=0.2A ; VCE=10V fT CONDITIONS 2 MIN TYP. MAX UNIT 50 8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC867