SavantIC Semiconductor Product Specification 2SD1158 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High speed switching ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·Solid state relay ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 50 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A IB Base current 2 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification 2SD1158 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 50 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=2A, IB=0.1A 0.5 V VBEsat Base-emitter saturation voltage IC=2A, IB=0.1A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.1 mA hFE DC current gain IC=1A ; VCE=5V 0.5 µs 3.0 µs 0.8 µs 250 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A;IB1=-IB2=0.5A RL=6? Pw = 20µs, Duty@2% 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1158 SavantIC Semiconductor Product Specification 2SD1158 Silicon NPN Power Transistors 4