SavantIC Semiconductor Product Specification 2SD1186 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 7 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD1186 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 6 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7 800 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 Switching times tf Fall time 1.0 µs IC=4A ;IB1=0.8A; IB2=-2A ts Storage time 1.0 2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD1186