SAVANTIC 2SD1213

SavantIC Semiconductor
Product Specification
2SD1213
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
·Large current capacity.
·Complement to type 2SB904
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
20
A
ICP
Collector current (Pulse)
30
A
PC
Collector power dissipation
TC=25
60
Ta=25
2.5
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1213
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=;
30
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
Collector-emitter saturation voltage
IC=8A; IB=0.4A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=10A ; VCE=2V
30
Transition frequency
IC=1A ; VCE=5V
VCEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
280
120
MHz
0.3
µs
0.6
µs
0.02
µs
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=10A;IB1=-IB2=-0.5A
VCC=10V ;RL=1D
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
2SD1213