SavantIC Semiconductor Product Specification 2SD1297 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High DC current gain ·Low saturation voltage APPLICATIONS ·For audio frequency power amplifier and low speed high current switching industrial use PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 8 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 1.5 A PT TC=25 100 Ta=25 3.0 Total power dissipation W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1297 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=15A ;IB=30mA 1.5 V VBEsat Base-emitter saturation voltage IC=15A ;IB=30mA 2.2 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA hFE-1 DC current gain IC=15A ; VCE=2V 1000 hFE-2 DC current gain IC=25A ; VCE=2V 250 100 UNIT V 30000 Switching times ton Turn-on time tstg Storage time IC=15A; IB1=-IB2=30mA VCC=60V;RL=4@ Fall time tf hFE-1 Classifications M L K J 1000-3000 2000-5000 4000-10000 8000-30000 2 1.0 µs 5.0 µs 2.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1297