SAVANTIC 2SD1380

SavantIC Semiconductor
Product Specification
2SD1380
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SB1009
·Low collector saturation voltage
·
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
40
V
VCEO
Collector-emitter voltage
Open base
32
V
VEBO
Emitter-base voltage
Open collector
5
V
2
A
10
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD1380
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;IB=0
32
V
V(BR)CBO
Collector-base breakdown voltage
IC=50µA ;IE=0
40
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50µA ;IC=0
5
V
Collector-emitter saturation voltage
IC=2.0A; IB=0.2A
ICBO
Collector cut-off current
IEBO
hFE
VCEsat
fT
COB
CONDITIONS
MIN
TYP.
UNIT
0.8
V
VCB=20V; IE=0
1
µA
Emitter cut-off current
VEB=4V; IC=0
1
µA
DC current gain
IC=0.5A ; VCE=3V
Transition frequency
IE=-0.5A ; VCE=5V
100
MHz
Collector output capacitance
IE=0; f=1MHz ; VCB=10V
30
pF
hFE Classifications
P
Q
R
82-180
120-270
180-390
2
0.5
MAX
82
390
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SD1380