SavantIC Semiconductor Product Specification 2SD1426 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PH package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in color TV deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PH) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3.5 A IB Base current 1.0 A PD Total power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX UNIT 1.56 /W SavantIC Semiconductor Product Specification 2SD1426 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A 8.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA hFE DC current gain IC=0.5A ; VCE=5V fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1.0MHz 95 pF Diode forward voltage IF=3.5A 2.0 V Fall time IC=3A;IB1=0.8A 1.0 µs VF tf 2 5 UNIT V 8 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1426