SavantIC Semiconductor Product Specification 2SD1453 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage,high speed ·Built-in damper diode APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 1500 V 6 V VCBO Collector-base voltage Open emitter VEBO Emitter-base voltage Open collector IC Collector current (DC) 3 A ICM Collector current-Peak 3.5 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD1453 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1500V; RBE== 0.5 mA hFE DC current gain IC=0.3A ; VCE=5V VF Diode forward voltage IF=3A 2.2 V Fall time ICP=2.75A; IB1=0.6A; IB2?-1.3A 0.8 µs tf 2 6 UNIT V 6 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD1453