SAVANTIC 2SD1499

SavantIC Semiconductor
Product Specification
2SD1499
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High transition frequency
·Complement to type 2SB1063
·Wide area of safe operation
·
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector -emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-Peak
8
A
PC
Collector power dissipation
Ta=25
2.0
W
TC=25
40
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1499
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=3A; IB=0.3A
2.0
V
VBE
Base-emitter on voltage
IC=3A ; VCE=5V
1.8
V
ICBO
Collector cut-off current
VCB=100V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
µA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
40
hFE-3
DC current gain
IC=3A ; VCE=5V
20
Transition frequency
IC=0.5A; VCE=5V
20
MHz
Collector output capacitance
f=1MHz ; VCB=10V
170
pF
fT
COB
CONDITIONS
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
MAX
100
UNIT
V
200
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
2SD1499