SavantIC Semiconductor Product Specification 2SD1559 Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1079 ·DARLINGTON APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 20 A ICM Collector current-peak 30 A IB Base current 3 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1559 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,RBE== 100 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ,IE=0 100 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ,IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=20mA 2.0 V VCEsat -2 Collector-emitter saturation voltage IC=20A; IB=200mA 3.0 V VBE sat-1 Base-emitter saturation voltage IC=10A; IB=20mA 2.5 V VBE sat-2 Base-emitter saturation voltage IC=20A; IB=200mA 3.5 V ICBO Collector cut-off current VCB=100V; IE=0 100 µA ICEO Collector cut-off current VCE=80V; RBE== 1.0 mA hFE DC current gain IC=10A ; VCE=3V 1000 MAX UNIT 20000 Switching times ton Turn-on time tstg Storage time tf IC=10A; IB1=-IB2=20mA Fall time 2 1.0 µs 9.0 µs 3.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SD1559