SavantIC Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB1085/1085A ·High transition frequency APPLICATIONS ·For low freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS 2SD1562 VCBO Collector-base voltage 120 Open base 2SD1562A VEBO Emitter-base voltage V 160 2SD1562 Collector-emitter voltage UNIT 120 Open emitter 2SD1562A VCEO VALUE V 160 Open collector 5 V IC Collector current 1.5 A ICM Collector current-peak 3.0 A PC Collector power dissipation TC=25 20 Ta=25 1.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1562 2SD1562A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO PARAMETER CONDITIONS 2SD1562 Collector-emitter breakdown voltage MIN TYP. MAX 120 IC=1mA; IB=0 2SD1562A V 160 2SD1562 Collector-base breakdown voltage UNIT 120 IC=50µA; IE=0 2SD1562A V 160 Emitter-base breakdown voltage IE=50µA; IC=0 VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A 2.0 V VBEsat Base-emitter on saturation voltage IC=1 A;IB=0.1 A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 µA 2SD1562 hFE DC current gain 5 V 60 320 60 200 IC=0.1A ; VCE=5V 2SD1562A fT Transition frequency IE=-0.1A ; VCE=5V 80 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 20 pF hFE classifications TYPE D E F 2SD1562 60-120 100-200 160-320 2SD1562A 60-120 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3