SavantIC Semiconductor Product Specification 2SD1585 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·VCEO 60V;VEBO 7V;IC(DC) 3.0A ·Complement to type 2SB1094 APPLICATIONS ·For use in audio frequency power amplifier and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector -emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 5 A IB Base current 0.6 A PC Collector power dissipation Ta=25 2.0 TC=25 15 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1585 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.5 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.2A 2.0 V ICBO Collector cut-off current VCB=60V; IE=0 10 µA IEBO Emitter cut-off current VEB=7V; IC=0 10 µA hFE-1 DC current gain IC=50mA ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 40 Transition frequency IC=0.1A; VCE=5V 16 MHz Collector output capacitance f=1MHz ; VCB=10V 48 pF fT COB CONDITIONS hFE-2 Classifications M L K 40-80 60-120 100-200 2 MIN TYP. MAX 60 UNIT V 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SD1585