SavantIC Semiconductor Product Specification 2SD1911 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 10 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD1911 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 VCE(sat) Collector-emitter saturation voltage IC=4.5A ; IB=1.2A 5.0 V VBE(sat) Base-emitter saturation voltage IC=4.5A ; IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=6V; IC=0 50 200 mA hFE DC current gain IC=1A ; VCE=5V 8 25 VF Diode forward voltage IF=5A 600 V 2.0 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1911