SavantIC Semiconductor Product Specification 2SD2025 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector -emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 10 A PC Collector power dissipation Ta=25 2 W TC=25 30 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2025 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V fT Transition frequency IC=0.2A ; VCE=5V 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF 2 MIN TYP. 1000 MAX UNIT 20000 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 2SD2025