SavantIC Semiconductor Product Specification 2SD2222 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 15 A PC Collector power dissipation TC=25 120 Ta=25 3.5 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2222 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA 3.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA 3.0 V ICBO Collector cut-off current VCB=160V; IE=0 100 µA ICEO Collector cut-off current VCE=160V; IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=1A ; VCE=5V 1000 hFE-2 DC current gain IC=7A ; VCE=5V 3500 Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 160 UNIT V 20000 20 MHz 2.0 µs 6.0 µs 1.2 µs Switching times ton Turn-on time ts Storage time tf Fall time IC=7A ;IB1=-IB2=7mA VCC=50V hFE-2 classifications Q P 3500-10000 7000-20000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 2SD2222