SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A IB Base current 1 A PC Collector power dissipation 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2389 Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO Collector-emitter breakdown voltage IC=30mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA 2.5 V VBEsat Base-emitter saturation voltage IC=6A ;IB=6mA 3.0 V ICBO Collector cut-off current VCB=160V IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE DC current gain IC=6A ; VCE=4V Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 85 pF fT Transition frequency IC=1A ; VCE=12V 80 MHz 0.6 µs 10.0 >s 0.9 >s 150 UNIT V 5000 Switching times ton Turn-on time ts Storage time tf Fall time IC=6A;RL=10A IB1=- IB2=6mA VCC=60V hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD2389 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 4 2SD2389