SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W(TC=25 ) APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V 1.5 A 3 A IC Collector current ICM Collector current-peak PC Collector dissipation Ta=25 2.0 TC=25 20 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD2400 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 120 V V(BR)CBO Collector-base breakdown voltage IC=50µA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=50µA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.1A 2.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 µA hFE DC current gain IC=0.1A ; VCE=5V Transition frequency IC=0.1A ; VCE=5V;f=30MHz 80 MHz Collector output capacitance IE=0; VCB=10V; f=1MHz 20 pF fT COB CONDITIONS hFE Classifications D E F 60-120 100-200 160-320 2 MIN TYP. 60 MAX UNIT 320 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD2400